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| 1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation p Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV PV Tj Tstg Value 100 75 2 500 300 150 440 500 200 -65...+200 Unit V V A mA mA mA mW mW C C tp=1ms VR=0 l=4mm, TL=45C l=4mm, TL x25C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (4) 1N4148.1N4448 Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=5mA IF=10mA IF=100mA VR=20 V VR=20 V, Tj=150 C VR=75 V IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV VHF=2V, f=100MHz IF=IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1xIR, RL=100W Type 1N4448 1N4148 1N4448 Symbol VF VF VF IR IR IR V(BR) CD Min 0.62 Typ Max 0.72 1 1 25 50 5 Unit V V V nA Reverse current mA mA V Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time y 100 4 45 8 4 pF % ns ns hr trr trr Typical Characteristics (Tj = 25_C unless otherwise specified) 1.2 VF - Forward Voltage ( V ) IF = 100 mA IF - Forward Current ( mA ) 1.0 0.8 10 mA 0.6 0.4 0.1 mA 0.2 0 -30 94 9169 1000 1 N 4148 100 Scattering Limit 10 1 mA 1 Tj = 25C 0 0.4 0.8 1.2 1.6 2.0 0.1 0 30 60 90 120 94 9170 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Forward Voltage vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 2 (4) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1N4148.1N4448 1000 IF - Forward Current ( mA ) 1 N 4448 IR - Reverse Current ( nA ) 100 Scattering Limit 10 Tj = 25C 100 1000 Scattering Limit 10 1 Tj = 25C 0 0.4 0.8 1.2 1.6 2.0 0.1 94 9171 1 1 94 9098 10 VR - Reverse Voltage ( V ) 100 VF - Forward Voltage ( V ) Figure 3. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Reverse Voltage Dimensions in mm Cathode Identification 0.55 max. technical drawings according to DIN specifications 94 9366 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g 26 min. 3.9 max. 26 min. TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 3 (4) 1N4148.1N4448 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 |
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